Title Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers
نویسندگان
چکیده
منابع مشابه
Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers.
We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with a ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using the in...
متن کاملSpin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers
Semiconductor spintronics has recently been recognized for its potential to combine the spin selectivity and nonvolatility of ferromagnetic compounds with the ability to fabricate hybrid thin-film devices naturally integrated with conventional semiconductors [1]. Yet in order to succeed in technological applications one has to be able to introduce roomtemperature spin-polarized materials that a...
متن کاملSynthesis, Spectroscopy and Magnetic Characterization of Five Dinuclear Copper(II) Complexes with 2, 3 or 4-Pyridinemethanol as the Ligand
The synthesis, spectroscopy and magnetic characterization of five new dinuclear copper(II) complexes are described. All five compounds have the general formula [Cu2(L)4(O-R)2](Cl)2 or [Cu2(L)2(Cl)2](Cl)2, in which R = CH3 or H, L=2, 3 or 4-pyridinemethanol as L2, L3 or L4, respectively. The title compounds consist of dinuclear units with bridging methoxo groups in [Cu2(L4)4(O-CH3)2](Cl)2, hydro...
متن کاملCurrent-induced polarization and the spin Hall effect at room temperature.
Electrically induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically induced out-of...
متن کاملTunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017